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Characterization of III–V compounds by quasi-elastic electronic scattering of light
Authors:BH Bairamov  VA Voitenko  IP Ipatova  VV Toporov  G Irmer  J Monecke  E Jahne
Institution:

A.F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, 194021, Leningrad, USSR

Fachbereich Physik der Bergakademie Freiberg, 9200, Freiberg, Germany

Zentralinstitut für Elektronenphysik, 1086, Berlin, Germany

Abstract:Quasi-elastic light scattering from individual electron single-particle excitations is observed experimentally and studied theoretically in n-GaAs and n-InP samples with nonparabolic dispersion of energy bands for a wide range of free-electron concentrations varying from ≈108 to ≈1019 cm-3. The results indicate that the scattering mechanisms associated with charge-, spin- and momentum-density fluctuations are represented by different light scattering line shapes and occur in different concentration ranges.
Keywords:
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