| 背散射方法研究金属中注入轻离子分布 |
| |
| 引用本文： | 瞿振元,马铁良,高乃飞,张宏涛,熊家炯.背散射方法研究金属中注入轻离子分布[J].物理学报,1984,33(12):1733-1739. |
| |
| 作者姓名： | 瞿振元 马铁良 高乃飞 张宏涛 熊家炯 |
| |
| 作者单位： | 清华大学物理系 |
| |
| 摘 要： | 用能量为MeV量级的α粒子背散射方法测定了大剂量N+ (5×1017 atom/cm2,100keV)注入铁膜(厚约4000?)及铁块(工业纯)的注入离子的浓度-深度分布。由于大剂量杂质的注入,使基体背散射谱出现“凹坑”,提出了一种利用“凹坑”计算杂质分布的方法。
关键词：
|
| 收稿时间： | 1983-11-28 |
A STUDY OF CONCENTRATION PROFILE OF LOW-MASS IONS IMPLANTED IN METALS BY R. B. S. |
| |
| QU ZHEN-YUAN,MA TIA-LIANG,GAO NAI-FEI,ZHANG HONG-TAO and XIONG JIA-JIONG.A STUDY OF CONCENTRATION PROFILE OF LOW-MASS IONS IMPLANTED IN METALS BY R. B. S.[J].Acta Physica Sinica,1984,33(12):1733-1739. |
| |
| Authors: | QU ZHEN-YUAN MA TIA-LIANG GAO NAI-FEI ZHANG HONG-TAO and XIONG JIA-JIONG |
| |
| Abstract: | The concentration profiles of high-dose implanted N+ (5×1017 atom/cm2, 100 keV) in iron foils (about 4000? thick) and iron bulk sample (industrial purity) were measured by E. B. S. via α-particle of energy in order of MeV. A dip was found in backscat-tering spectrum of the substrate, as a result of the high-dose impurity, implantation a method was developed to calculate the concentration profile of impurity based on the dip.
Keywords： |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
