Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers |
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| Authors: | Tong Jin-Hui Li Shu-Ti Lu Tai-Ping Liu Chao Wang Hai-Long Wu Le-Juan Zhao Bi-Jun Wang Xing-Fu and Chen Xin |
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| Affiliation: | Institute of Opto-electronic Materials and Technology,South China Normal University,Guangzhou 510631,China |
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| Abstract: | The advantages of InGaN based light-emitting diodes with InGaN/GaN multilayer barriers are studied.It is found that the structure with InGaN/GaN multilayer barriers shows improved light output power,lower current leakage,and less efficiency droop over its conventional InGaN/GaN counterparts.Based on the numerical simulation and analysis,these improvements on the electrical and the optical characteristics are mainly attributed to the alleviation of the electrostatic field in the quantum wells(QWs) when the InGaN/GaN multilayer barriers are used. |
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| Keywords: | GaN based light-emitting diode InGaN/GaN multilayer barriers electrostatic field |
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