Effect of annealing on the optical and electrical properties of ZnO:Er films |
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| Authors: | N. R. Aghamalyan R. K. Hovsepyan E. A. Kafadaryan R. B. Kostanyan S. I. Petrosyan G. H. Shirinyan M. N. Nersisyan A. Kh. Abduev A. Sh. Asvarov |
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| Affiliation: | (1) Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia;(2) Institute of Physics, Dagestan Scientific Center of RAN, Makhachkala, Russia |
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| Abstract: | The effect of dopant concentration and annealing in the oxidizing atmosphere on the structural, optical, and electrical properties of ZnO:Er films deposited on sapphire substrates by the electron-beam evaporation method is investigated. The optical and electrical properties of these films were studied by UV-VIS-IR absorption and reflection spectroscopy, photoluminescence, and resistivity measurements. Experimental results reveal that as-deposited ZnO:Er films have both high transmittance in the visible range and low electrical resistivity and can be used as efficient transparent conducting oxides (TCOs). These films annealed in the oxidizing atmosphere have a visible emission band which can be used to fabricate light-emitting diodes. |
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| Keywords: | ZnO:Er films annealing optical properties resistivity |
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