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Crystal structure, carrier concentration and IR-sensitivity of PbTe thin films doped with Ga by two different methods |
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| Authors: | A M Samoylov M K Sharov S A Buchnev A M Khoviv and E A Dolgopolova |
| Institution: | a Department of Chemistry, Voronezh State University, Universitetskaya Sq. 1, 394693 Voronezh, Russia b Department of Physics, Voronezh State University, Universitetskaya Sq. 1, 394693 Voronezh, Russia |
| Abstract: | The comparison of the results of chemical composition, crystal structure, electronic properties and infrared photoconductivity investigations of PbTe/Si and PbTe/SiO2/Si heterostructures doped with Ga atoms by two different techniques is presented in this work. One of these techniques is principally based on the vapour-phase doping procedure of PbTe/Si and PbTe/SiO2/Si heterostructures, which were previously formed by the modified “hot wall” technique. The second method of PbTe(Ga)/Si and PbTe(Ga)/SiO2/Si heterostructure preparation is based upon the fabrication of lead telluride films, which have been doped with Ga atoms in the layer condensation process directly. The lattice parameter and charge carrier density evolutions with the Ga impurity concentration show principally the different character of PbTe(Ga)/Si films prepared by these techniques. It has been proposed that complicated amphoteric (donor or acceptor) behaviour of Ga atoms may be explained by different mechanisms of substitution or implantation of impurity atoms in the crystal structure of lead telluride. |
| Keywords: | A1 Crystal structure A1 Doping A1 Impurities A1 Point defects A3 Hot wall epitaxy B2 Semiconducting lead compounds |
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