1. IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120, USA;2. Solid State and Photonics Lab, Stanford University, Stanford, CA 94305, USA;3. Advanced Light Source, LBNL, Berkeley, CA 94720, USA
Abstract:
We present a detailed magnetic characterization of Cr and Mn doped InN films be means of superconducting quantum interference device magnetometry and X-ray magnetic circular dichroism. The InN:Cr films exhibit ferromagnetic behavior up to 300 K in a doping region from 2% to 8% without detectable phase segregation. The easy axis of magnetization is found to be in the film plane. On the contrary, Mn-doped films show signatures of phase segregation and paramagnetic behavior.