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Spin-polarized scanning tunneling spectroscopy of dislocation lines in Fe films on W(1 1 0)
Authors:M. Bode  K. von BergmannO. Pietzsch  A. KubetzkaR. Wiesendanger
Affiliation:Institute of Applied Physics and Microstructure Research Center, University of Hamburg, Jungiusstrasse 11, 20355 Hamburg, Germany
Abstract:We have studied the spin-resolved electronic properties of dislocation lines on the Fe double-layer (DL) on W(1 1 0) by spin-polarized scanning tunneling spectroscopy. The data reveal that the dislocation lines are ferromagnetically ordered with the magnetic contrast exhibiting a pronounced bias-dependence. By comparing tunneling spectra which were measured on the pseudomorphic DL and at different lateral separation from the dislocation line, we find a pronounced shift of a peak which originally appears at positive sample bias towards the Fermi level EFEF. In contrast, the binding energy of a peak just below EFEF remains constant but increases in intensity. This causes a pronounced modification of the bias voltage-dependent magnetic asymmetry.
Keywords:Spin-polarized scanning tunneling microscopy   Thin magnetic films   Dislocation lines   Spin-resolved electronic structure
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