Perpendicular anisotropy of Co3Pt deposited on the NiFeMo/Ru buffer |
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Authors: | Duhyun Lee T.W. Lim G.H. Jeong S.J. Suh S.Y. Yoon |
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Affiliation: | 1. AMPIT, Sungkyunkwan Univeristy, 300, Chunchun-dong, Suwon 440-746, South Korea;2. Storage Laboratory, Samsung Advanced Institute of Technology, Yongin 449-712, South Korea |
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Abstract: | The multilayer of Ta/NiFeMo/Ru/Co3Pt was sputter deposited on the Si (1 0 0) wafer. Using the NiFeMo buffer layer greatly enhanced the texture of Co3Pt layer. The enhanced texture increased the perpendicular magnetic anisotropy of Co3Pt. According to the VSM and XRD results, only the 5 nm of NiFeMo was good enough to produce the texture and perpendicular anisotropy in Co3Pt layer. The perpendicular anisotropy was attributed to the existence of short-range-ordered HCP structure of Co3Pt. |
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Keywords: | 75.20.En 75.30.Gw 75.50.Ss 75.70.Ak |
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