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Co-doped In2O3 thin films: Room temperature ferromagnets
Authors:Nguyen Hoa Hong  Joe Sakai  Ngo Thu Huong  Virginie Brizé
Institution:1. Laboratoire LEMA, UMR 6157 CNRS-CEA, Université F. Rabelais, Parc de Grandmont, 37200 Tours, France;2. School of Materials Science, JAIST, Asahidai 1-1, Nomi, Ishikawa 923-1292, Japan
Abstract:Laser-ablated Co-doped In2O3 thin films were fabricated under various growth conditions on R-cut Al2O3 and MgO substrates. All Co:In2O3 films are well-crystallized, single phase, and room temperature ferromagnetic. Co atoms were well substituted for In atoms, and their distribution is greatly uniform over the whole thickness of the films. Films grown at 550 °C showed the largest magnetic moment of about 0.5 μB/Co, while films grown at higher temperatures have magnetic moments of one order smaller. The observed ferromagnetism above room temperature in Co:In2O3 thin films has confirmed that doping few percent of magnetic elements such as Co into In2O3 could result in a promising magnetic material.
Keywords:Ferromagnetic  Semiconductors  Thin films
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