Abstract: | Bridgman growth of Nd:SGG (Sr3Ga2Ge4O14) crystals has been investigated for the first time. Pt crucible of ??25mm×250mm with a seed well of ??10mm×80 mm is used, and seed is SGG crystal of ??10mm×50mm grown by Bridgman method in advance. The growth parameters are optimized as the furnace temperature is set to 1450~1500°C, temperature gradient in the crystal‐melt interface is less than 25 K/cm and growth rate is less than 0.5mm/h. The Nd:SGG crystals with 25mm in diameter and 60mm in length are grown successfully from 1.5 to 8at% Nd3+ doped stoichiometric Sr3Ga2Ge4O14 melt. The distribution coefficient and concentration of Nd3+ in Nd:SGG crystals are obviously higher than those of Nd:YAG crystal. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |