| Abstract: | A modified crystallization process using current‐induced joule heating under vacuum is presented. A thin layer of high temperature resistant tungsten was sputtered on the amorphous silicon as the conducting and annealing medium. The thin film thickness was measured by α‐stepper. The high current density provided effective means in crystallizing the amorphous silicon layer. The crystalline morphology was studied by scanning electron microscopy (SEM) after Secco‐etch, transmission electron microscopy (TEM), and x‐ray diffraction (XRD), under different annealing conditions. The grain size was controlled in the range of 0.1‐0.5 μm and could be increased with annealing time. No tungsten silicide was found. Some defects were formed due to electron‐migration effect near the electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
