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Characterization of in‐plane structures of vapor deposited thin‐films of distyryl‐oligothiophenes by grazing incidence x‐ray diffractometry |
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| Authors: | Noriyuki Yoshimoto Keijyu Aosawa Toshinori Taniswa Kazuhiko Omote J. Ackermann C. Videlot‐Ackermann H. Brisset F. Fages |
| Abstract: | The in‐plane structures of vapor deposited ultrathin films of distyryl‐oligothiophenes (DS‐2T) on SiO2 substrate were characterized by grazing incidence x‐ray diffractometry (GIXD). Two polymorphs, low‐temperature and high‐temperature phases, were identified, and the two dimensional unit cell parameters were determined for each polymorph. The polymorphism depends on substrate temperature and film thickness. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Keywords: | x‐ray diffraction vapor phase epitaxy organic compounds semiconducting materials |