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Theoretical analysis of resonant raman scattering: Simulations of lineshapes and excitation profiles
Authors:Leonardo Angeloni  Pier Francesco Fracassi  Raffaele Guido Della Valle
Institution:Departimento di Chimica, Università di Firenze, via Gino Capponi 9, 50121 Florence, Italy;Istituto di Chimica Fisica, Universitá di Bologna, viale Risorgimento 4, 40136 Bologna, Italy
Abstract:The steady-state response of a three-level system in the presence of a strong laser field is described with the density operator formalism, in order to derive an analytical expression for the intensity of resonance Raman scattering. The Liouville equation for the density operator is written in quantum form for both the molecular system and the radiation field, making use of the dipole and rotating-wave approximations for the matter-radiation interaction, and of the Markov approximation for the molecular decays. The equation is solved exactly for the laser field, and in perturbative way for the generated field. The results account for power broadening of the generated line. Rabi intensity-dip of the generated signal, and for the excitation profiles in the Franck-Condom approximation.
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