Effect of interstitial impurities on positronium formed in voids of vanadium |
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| Authors: | M Hasegawa Y Saitoh S Yamaguchi H Takahashi S Ohnuki |
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| Institution: | (1) Institute for Materials Research, Tohoku University, 980 Sendai, Japan;(2) Metals Research Institute, Faculty of Engineering, Hokkaido University, 060 Sapporo, Japan |
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| Abstract: | Angular correlation of two-photon annihilation radiation (ACAR) measurements have been performed to study the effect of interstitial impurities (O, C and D) on positronium (Ps) formation in irradiation-induced voids of vanadium. It has been observed that Ps formation is sensitively affected by doping with the interstitial impurities, irradiation dose, irradiation temperature, and also by post-irradiation annealing. The Ps component intensity is found to be related to segregation of the interstitial impurities and provides a new experimental method to study void surfaces. |
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