Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatings |
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Authors: | P. Colombo T. E. Paulson C. G. Pantano |
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Affiliation: | (1) Dipartimento di Ingegneria Meccanica — Settore Materiali, Università di Padova, via Marzolo 9, 35131 Padova, Italy;(2) Department of Materials Science and Engineering, The Pennsylvania State University, 16802 University Park, PA, USA |
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Abstract: | Silicon carbide and silicon oxycarbide films were prepared from solutions of polycarbosilane and methyldimethoxysilane + tetraethoxysilane, respectively, and deposited on different substrates (Si wafers, stainless steel plates, sapphire and SiC fibers). The coatings were heated at different temperatures and in different atmospheres, such as regular grade argon, ultra high purity and argon vacuum. The films were characterized using different techniques (FT-IR, XRD, SIMS, Ellipsometry).The influence of the processing parameters (heat treatment temperature and atmosphere) on the final microstructure of the coatings is discussed in this article. |
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Keywords: | silicon carbide silicon oxycarbide thin film |
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