忆阻器、忆容器和忆感器的Simulink建模及其特性分析

忆阻器、忆容器和忆感器均是具有记忆特性的新型非线性电路元件,也被称为记忆元件.以三种电路元件的通用数学模型为依据,从数学分析的角度,对忆阻器、忆容器和忆感器的Simulink模型进行了建立.在Simulink模型中体现了记忆元件对历史状态和系统状态变量的依赖性,正确表现出其独特的记忆特性.通过一系列仿真分析,得到了忆阻器、忆容器和忆感器的元件特性,验证了模型的有效性.此外,通过对三者在不同参数、不同激励下的电路特性分析,得到了三种记忆元件等效模型随频率和幅值变化的规律,为以后忆阻器、忆容器和忆感器基于Simulink的仿真研究和应用研究奠定基础.

Simulink modeling of memristor,memcapacitor, meminductor and their characteristics analysis

Memristor, memcapacitor and meminductor are novel nonlinear circuit elements with memory, which are also known as the memory elements. Based on the mathematical models of these three circuit elements, from the point of view of mathematical analysis, memristor, memcapacitor and meminductor Simulink based models are established. Simulink models of the memory elements reflect that their values are dependent on their historical states and their state variables, and correctly show their unique memory properties. A series of simulation analyses are done, and the typical characteristics of the three memory elements are obtained, showing the validities of these models. In addition, by studying the circuit characteristics under different parameters and excitations, the changing laws of these equivalent models with frequency and amplitude are obtained, which lay the foundation for research and application based on memristor, memcapacitor and meminductor's Simulink simulator.