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| 电子俘获光存储材料BaLiF3:Eu2+的光激励发光及光存储性质研究 | |
| 引用本文： | 王欣姿,王永生,孙力,徐征. 电子俘获光存储材料BaLiF3:Eu2+的光激励发光及光存储性质研究[J]. 光谱学与光谱分析, 2006, 26(3): 399-402 |
| 作者姓名： | 王欣姿 王永生 孙力 徐征 |
| 作者单位： | 发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京,100044;发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京,100044;发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京,100044;发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京,100044 |
| 基金项目： | 中国科学院资助项目 , 教育部重点规划项目 |
| 摘 要： | 利用高温固相反应法制备了混晶状的BaLiF3:Eu2 样品.其紫外光激发的发射峰与光激励发光峰均在410 nm处,属于Eu2 的5d-4f跃迁发光.光激励峰位于660 nm,因而可以配用简单廉价的氦氖激光器.根据光谱特征给出了光激励发光的简单机理.测量了该材料光激励发光衰减性能,结果表明BaLiF3:Eu2 存储的信息可以方便地擦除掉.该材料具有优良的光激励发光特性,是一类很有发展前途的电子俘获光存储材料. |
| 关 键 词： | 电子俘获 光激励发光 光存储 |
| 文章编号： | 1000-0593（2006）03-0399-04 |
| 收稿时间： | 2005-01-10 |
| 修稿时间： | 2005-05-06 |
Photostimulated Luminescence and Optical Storage of BaLiF3 :Eu2+ |
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| WANG Xin-zi,WANG Yong-sheng,SUN Li,XU Zheng. Photostimulated Luminescence and Optical Storage of BaLiF3 :Eu2+[J]. Spectroscopy and Spectral Analysis, 2006, 26(3): 399-402 | |
| Authors: | WANG Xin-zi WANG Yong-sheng SUN Li XU Zheng |
| Affiliation: | Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronie Technology, Beijing Jiaotong University, Beijing 100044, China |
| Abstract: | BaLiF_3:Eu~(2 ) was prepared by high temperature solid state reaction. The peaks of photoluminescence spectrum and photostimulated luminescence (PSL) spectrum are both at 410 nm which are attributed to the 5d-4f emission of Eu 2 . The photostimulated luminescence excitation spectrum has its maximum at about 660 nm. Therefore, He-Ne laser is suitable for the reading-out process. The mechanism of PSL was also studied according to the characters of the spectra in the present paper. The PSL decay property of the glass ceramics was investigated, and it was shown that the storage information is easy to be erased. BaLiF_3:Eu~(2 ) has good properties of PSL and a promising future. |
| Keywords: | Electron trapping Photostimulated luminescence Optical storage |
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