Effect of the substrate temperature on the crystallization of TiO<sub>2</sub> films prepared by DC reactive magnetron sputtering期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

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Effect of the substrate temperature on the crystallization of TiO₂ films prepared by DC reactive magnetron sputtering

Authors:	Yuanyuan Zhang Xiangyang Ma Peiliang Chen Deren Yang

Institution:	^aState Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

Abstract:	Titanium oxide (TiO₂) films were deposited on silicon substrates at the temperature in the range 50–600 °C by DC reactive magnetron sputtering. It was found that the anatase and rutile phases co-existed in the TiO₂ films deposited at 450–500 °C, while only the anatase phase existed in those deposited at other temperatures. The mechanism of such a crystallization behavior of TiO₂ films is preliminarily explained.

Keywords:	A1 Anatase A1 Crystallization A1 Rutile A1 Substrate temperature B1 TiO₂ films
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