Dispersion parameters and nonlinear optical properties of silicon nitride rib waveguides

Silicon nitride rib waveguides are numerically studied by use of a full-vectorial mode solver program based on finite difference method. Dispersion parameters, up to the third-order, are computed for waveguides of heights 0.8 μm, 0.9 μm, and 1 μm. Like silicon-on-insulator waveguides, silicon nitride rib waveguides allow us to tailor dispersion parameters at telecom wavelengths. Deeply-etched silicon nitride rib waveguides of height up to 1.5 μm are investigated for correct geometries to achieve polarization independence. The computations lead to a minimum etch depth which can be written as linear function of the waveguide height. Etch-depth and waveguide height dependencies of the nonlinear refractive index coefficient of the silicon nitride are studied. It is shown that third-order optical nonlinearities in silicon nitride rib waveguides can be enhanced by suitable choices of waveguide parameters.