Activation of silicon quantum dots for emission |
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Authors: | Huang Wei-Qi Miao Xin-Jian Huang Zhong-Mei Liu Shi-Rong Qin Chao-Jian |
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Institution: | a Key Laboratory of Photoelectron Technology and Application, Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;b State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese academy of Sciences, Guiyang 550003, China |
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Abstract: | Emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dots can break the passivation to form localized electronic states in band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matters for emission. By controlling the surface bonds of silicon quantum dots, emissions of various wavelengths can be obtained. Our experimental results demonstrate that annealing is important in treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots. |
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Keywords: | activation for emission silicon quantum dots localized states |
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