首页 | 本学科首页   官方微博 | 高级检索  
     检索      

Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment
作者姓名:高欣  杨生胜  冯展祖  张雷
作者单位:Science and Technology on Vacuum & Cryogenics Technology and Physics Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China
摘    要:Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation. The mean degradation of the maximum power (Pmax) is presented and analyzed. The degradation at both electron energies has been correlated with the displacement damage dose (Dd). A good linearity between the electron Dd and the mean Pmax degradation is obtained. The concept of Dd has also been used to predict the Si solar cell response in a low-earth-orbit (Altitude 799 km, Inclination 99o) radiation environment, considering the shielded effect of a 120 μ m-thick silica coverglass on reducing the radiation. Compared with the on-orbit data from a Si solar array of a Chinese satellite (duration from April 2007 to July 2010), a good match can be found between the on-orbit data and the predicted results using Dd methodology, indicating the method is appropriate for evaluating the radiation damage of the solar cells, and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications, where harsh radiation environments produce damage in optoelectronic device materials.

关 键 词:radiation  displacement  damage  dose  Si  solar  cell  LEO
收稿时间:2011-11-1

Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment
GAO Xin,YANG Sheng-Sheng FENG Zhan-Zu ZHANG Lei.Evaluation and prediction of the degradation of space Si solar cells induced by a low-earth-orbit radiation environment[J].High Energy Physics and Nuclear Physics,2012,36(9):900-904.
Authors:GAO Xin  YANG Sheng-Sheng FENG Zhan-Zu ZHANG Lei
Institution:Science and Technology on Vacuum & Cryogenics Technology and Physics Laboratory,Lanzhou Institute of Physics,Lanzhou 730000,China
Abstract:Space-graded silicon solar cells are evaluated by 1 MeV and 2 MeV electron-irradiation.The mean degradation of the maximum power(P max) is presented and analyzed.The degradation at both electron energies has been correlated with the displacement damage dose(Dd).A good linearity between the electron Dd and the mean P max degradation is obtained.The concept of Dd has also been used to predict the Si solar cell response in a low-earth-orbit(Altitude 799 km,Inclination 99°) radiation environment,considering the shielded effect of a 120 μm-thick silica coverglass on reducing the radiation.Compared with the on-orbit data from a Si solar array of a Chinese satellite(duration from April 2007 to July 2010),a good match can be found between the on-orbit data and the predicted results using Dd methodology,indicating the method is appropriate for evaluating the radiation damage of the solar cells,and also to provide a new technique for studying radiation effects on the optoelectronic detectors used in many high energy physics applications,where harsh radiation environments produce damage in optoelectronic device materials.
Keywords:radiation  displacement damage dose  Si solar cell  LEO
本文献已被 CNKI 等数据库收录!
点击此处可从《中国物理 C》浏览原始摘要信息
点击此处可从《中国物理 C》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号