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Study of Ge epitaxial growth on Si substrates by cluster beam deposition |
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| Authors: | J. L. Xu and J. Y. Feng |
| Affiliation: | Department of Materials Science and Engineering, State Key Laboratory of Advanced Materials, Tsinghua University, 100084 Beijing, China |
| Abstract: | Ge epitaxial layers with reasonable quality were grown on Si (1 1 1) substrates by cluster beam deposition (CBD) process. Molecular dynamics study of the low energy Ge clusters deposition process utilizing the Stillinger–Weber two- and three-body interaction potentials was carried out to compare the experimental results. Both experimental and simulation results prove that the substrate temperature plays a dominant role in the epitaxial growth of Ge films in CBD process. The influence mechanisms of temperature are discussed. |
| Keywords: | A1. Computer simulation A3. Vapor phase epitaxy B2. Semiconducting germanium B2. Semiconducting silicon |
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