Growth of Au thin film on Cu-modified Si(1 1 1) surface |
| |
Authors: | DV Gruznev DA Olyanich DA Tsukanov EA Borisenko MV Ivanchenko AA Saranin |
| |
Institution: | a Institute of Automation and Control Processes, 5 Radio str., 690041 Vladivostok, Russia b Faculty of Physics and Engineering, Far Eastern State University, 8 Sukhanova str., 690000 Vladivostok, Russia c Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok, Russia |
| |
Abstract: | Miniaturizing of electronic devices requires that conductive elements maintain advanced electrical characteristics upon reducing their geometrical sizes. For gold, which is valued for its high electrical conductivity and stability against ambient conditions, creation of extra-thin films on silicon is hampered by formation of the quite complex Au/Si interface. In the present work, by forming a Si(1 1 1)5.55 × 5.55-Cu surface reconstruction prior to Au deposition we formed Au films with smoother surface morphology and higher surface conductivity compared to Au film grown on a pristine Si(1 1 1)7 × 7 surface. Scanning tunnelling microscopy and four-point probe measurements were used to characterize the growth mode of the Au film on a Si(1 1 1)5.55 × 5.55-Cu reconstruction at room temperature. |
| |
Keywords: | Scanning tunnelling microscopy Electrical transport measurements Gold Metallic films |
本文献已被 ScienceDirect 等数据库收录! |
|