Modification of the chemical properties of silicon by ion implantation with high doses of Ar and P |
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| Authors: | R. Ross M. T. Pham |
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| Affiliation: | (1) Central Institute of Nuclear Research, Academy of Sciences, Rossendorf, GDR |
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| Abstract: | ![]()
The behaviour of Si implanted with high doses of P and Ar (5·1014 to 1017 cm−2) in HF solutions was investigated using radioactive isotopes. The reaction products were analyzed by ion exchange and electrochemical polarization. An increased dissolution was found and a possible reaction mechanism given. |
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