|
|||||
|
|
The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs) |
|
| Authors: | M Gökçen T Tunç? Alt?ndal ? Uslu |
| Institution: | a Department of Physics, Faculty of Arts and Sciences, Düzce University, Düzce, Turkey b Department of Science Education, Faculty of Education, Aksaray University, Aksaray, Turkey c Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey d Department of Chemistry Education, Faculty of Education, Gazi University, Ankara, Turkey |
| Abstract: | Two types of Schottky Barrier Diodes (SBDs) with and without PVA (Bi2O3-doped) polymeric interfacial layer, were fabricated and measured at room temperature in order to investigate the effects of the PVA (Bi2O3-doped) interfacial layer on the main electrical parameters such as the ideality factor (n), zero-bias barrier height (ΦB0), series resistance (Rs) and interface-state density (Nss). Electrical parameters of these two diodes were calculated from the current-voltage (I-V) characteristics and compared with each other. The values of ΦB0, n and Rs for SBDs without polymeric interfacial layer are 0.71 eV, 1.44 and 4775 Ω, respectively. The values of ΦB0, n and Rs for SBDs with PVA (Bi2O3-doped) polymeric interfacial layer are 0.74 eV, 3.49 and 10,030 Ω, respectively. For two SBDs, the energy density distribution profiles of interface states (Nss) were obtained from forward-bias I-V measurements by taking the bias dependence of Rs of these devices into account. The values of Nss obtained for the SBD with PVA (Bi2O3-doped) polymeric interfacial layer are smaller than those of the SBD without polymeric interfacial layer. |
| Keywords: | Bi2O3-doped PVA Metal-polymer-semiconductor (MPS) Series resistance effect I-V characteristics |
| 本文献已被 ScienceDirect 等数据库收录！ | |