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Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition |
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| Authors: | MK FungKK Wong XY ChenYF Chan AMC Ng AB Djuriši? WK Chan |
| Institution: | a Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong b Nanostructure Institute for Energy and Environmental Research, Division of Physical Sciences, South University of Science and Technology of China, Shenzhen, China c Electron Microscopy Unit, The University of Hong Kong, Pokfulam Road, Hong Kong d Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong |
| Abstract: | Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiOx nanowires, a mixture of SiOx and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. |
| Keywords: | Metal oxide Nanowires ITO |
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