Impurity substitution effects in BiFeO3 thin films—From a viewpoint of FeRAM applications

Impurity substitution effects in BiFeO₃ thin films are reviewed from a viewpoint of FeRAM (ferroelectric random access memory) applications, in which such characteristics as a large remanent polarization, a low coercive voltage, and excellent fatigue endurance are most important. First, it is described that substitution experiments for Bi and Fe atoms in the films have already been conducted using almost all rare earth and transition metal elements. A list of the published paper is given in a form of the periodic table of elements. Then, two typical cases, La substitution for the Bi site and Mn substitution for the Fe site, are reviewed in detail. Particular attention is paid to the role of these impurity atoms by which the ferroelectric and insulating properties of BiFeO₃ films are significantly improved. Finally, impurity effects due to substitution or co-substitution of other elements are reviewed.