Suppression of bias stress-induced degradation of pentacene-TFT using MoOx interlayer |
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| Authors: | Jun Li Hua-Ping LinFang Zhou Wen-Qing Zhu Xue-Yin JiangZhi-Lin Zhang |
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| Institution: | a Department of Materials Science, Shanghai University, Jiading, Shanghai 201800, China
b Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China |
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| Abstract: | The bias stress effect in pentacene thin-film transistors (TFTs) with and without MoOx interlayer was characterized. The device without MoOx interlayer showed a large threshold voltage shift of 5.1 V after stressing with a constant gate-source voltage of −40 V for 10000 s, while at the same condition, the device with MoOx interlayer showed a low threshold voltage shift of 1.9 V. The results can be attributed to the stable interface between MoOx/pentacene and small contact resistance change for the device with MoOx/Cu electrode. Pentacene-TFTs with MoOx interlayer showed a high field-effect mobility of 0.61 cm2/V s and excellent bias stability, which could be a significant step toward the commercialization of OTFT technology. |
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| Keywords: | Bias stress effect Organic thin-film transistor MoOx |
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