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Investigation of electronic and optical properties in Al−Ga codoped ZnO thin films |
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| Authors: | Woojin LeeSungjin Shin Dae-Ryong JungJongmin Kim Changwoo NahmTaeho Moon Byungwoo Park |
| Institution: | a WCU Hybrid Materials Program, Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea b School of Electrical Engineering, Korea University, Seoul 136-713, Republic of Korea |
| Abstract: | Electronic and optical properties of Al−Ga codoped ZnO thin films were investigated by post-annealing. The lowest resistivity of the Al-Ga codoped ZnO films was observed from the 450 °C-annealed sample. The Fermi-level shift of the Al−Ga codoped ZnO film was ∼0.6 eV from x-ray photoelectron spectroscopy, and the widening of optical-bandgap in the Al−Ga codoped ZnO film was ∼0.3 eV. The correlations of optical-bandgap with Fermi-level shift and conduction band filling were suggested by schematic band diagrams. |
| Keywords: | Transparent conducting oxide Al-Ga codoped ZnO Fermi-level shift Optical-bandgap |
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