| 势能的分析模型计算GaAs-Ga_(1-x)Al_xAs调制掺杂异质结中的电子能极(英文) |
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| 引用本文： | 邓容平.势能的分析模型计算GaAs-Ga_(1-x)Al_xAs调制掺杂异质结中的电子能极(英文)[J].新疆大学学报(理工版),1992(1). |
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| 作者姓名： | 邓容平 |
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| 作者单位： | 新疆大学物理系 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 本文提出一个用于计算GaAs-Ga_(1-x)Al_xAs调制掺杂异顺结中准二维电于气体的能级的势能分析模型,该模型的计算结果与自洽计算结果相符合,并且电子的波函数以及电子的势能可以用简单的解析式表示出来,应用该模型计算电子能级是一种简便可行的方法。
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| 关 键 词： | GaAs-Ga_(1-x)-Al_xAs调制掺杂异质结 二维电子气体 势能分析模型 电子能极 |
A Simple Analytic Potential Model for Electron Energy Levels in GaAs-Ga_(1-x)Al_xAs Modulation-Doped Heterojunctions |
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| Deng Rongping.A Simple Analytic Potential Model for Electron Energy Levels in GaAs-Ga_(1-x)Al_xAs Modulation-Doped Heterojunctions[J].Journal of Xinjiang University(Science & Engineering),1992(1). |
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| Authors: | Deng Rongping |
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| Institution: | Deng Rongping Department of Physics,Xinjiang University |
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| Abstract: | An analytic potential energy model was presented to calculate the energy levels of the quasi bi-dimen-
sional electron gases in the GaAs-Ga_(1-x)Al_xAs modulation-doped heterojuctions.The calculated results are in
agreement with those of self-consistent calculations.The wave functions as well as the potential energy can
be expressed analytically.It is an easy and practical way to calculate the energy levels with this analytic
model. |
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| Keywords: | GaAs-Ga_(1-x)Al_xAs modulation-doped heterojunctlon bi-dimensional electron gas analytic potential model energy levels |
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