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Synthesis and structural characterization of Al4Si2C5-homeotypic aluminum silicon oxycarbide, (Al6−xSix)(OyC5−y) (x∼0.8 and y∼1.6)
Authors:Motoaki Kaga  Tomoyuki Iwata  Hiromi Nakano
Affiliation:a Department of Environmental and Materials Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
b Cooperative Research Facility Center, Toyohashi University of Technology, Toyohashi 441-8580, Japan
Abstract:
We have prepared a new layered oxycarbide, [Al5.25(5)Si0.75(5)][O1.60(7)C3.40(7)], by isothermal heating of (Al4.4Si0.6)(O1.0C3.0) at 2273 K near the carbon-carbon monoxide buffer. The crystal structure was characterized using X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound is trigonal with space group R3?m (centrosymmetric), Z=3, and hexagonal cell dimensions a=0.32464(2) nm, c=4.00527(14) nm and V=0.36556(3) nm3. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The reliability indices were Rwp=4.45% (S=1.30), Rp=3.48%, RB=2.27% and RF=1.25%. The crystal is composed of three types of domains with nearly the same fraction, one of which has the crystal structure of space group Rm. The crystal structure of the remaining two domains, which are related by pseudo-symmetry inversion, is noncentrosymmetric with space group R3m.
Keywords:Aluminum silicon oxycarbide   Crystal structure   Rietveld method   Twin-related domain structure   Al4Si2C5
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