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Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO·7Al2O3 and 12SrO·7Al2O3 |
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| Authors: | Masashi Miyakawa Hidenori Hiramatsu Masahiro Hirano |
| Affiliation: | a Frontier Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan b Materials and Structures Laboratory, Tokyo Institute of Technology, Mail Box R3-1, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan |
| Abstract: | Epitaxial growth and electron doping of 12CaO·7Al2O3 (C12A7) and 12SrO·7Al2O3 (S12A7) are reported. The C12A7 films were prepared on Y3Al5O12 (YAG) single-crystal substrates by pulsed laser deposition at room temperature and subsequent thermal crystallization. X-ray diffraction patterns revealed the films were grown epitaxially with the orientation relationship of (001)[100] C12A7 || (001)[100] YAG. For S12A7, pseudo-homoepitaxial growth was attained on the C12A7 epitaxial layer. Upon electron doping, metallic conduction was achieved in the C12A7 film and the S12A7/C12A7 double-layered films. Analyses of optical absorption spectra for the S12A7/C12A7 films provided the densities of free electrons in each layer separately. Hall measurements exhibited larger electron mobility in the S12A7/C12A7 film than those in C12A7 and S12A7 films, suggesting free electrons may be accumulated at the S12A7/C12A7 interface due presumably to a discontinuity of the cage conduction bands. |
| Keywords: | Epitaxial growth Electron doping Pulsed laser deposition |
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