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C-oriented SrBi2Nb2O9 films grown on YBa2Cu3O7−δ /SrTiO3 and NdGaO3 |
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| Authors: | Yu A Boikov I P Pronin T A Shaplygina Z G Ivanov T Claeson D Érts |
| Institution: | 1. A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia 2. Physics Department, Chalmers University of Technology, S-41296, G?teborg, Sweden 3. Institute of Chemical Physics, University of Latvia, 1586, Riga, Latvia |
| Abstract: | Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu3O7?δ /(100)SrTiO3 and (001)NdGaO3, with c axis normal to the substrate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Å steps at a condensation temperature of 700 °C. Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi2Nb2O9 films grown on (001)YBa2Cu3O7?δ /(100)SrTiO3. The dielectric permittivity of the SrBi2Nb2O9 films measured along the c axis is 123 (T=300 K, f=100 kHz), and tan δ≈0.04. |
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