Modeling and experimental study of 780–808-nm AlGaAs/GaAs injection lasers with electron superlattice barriers |
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Authors: | V V Bezotosny Guan Rong Guo Guan Xin Guo P V Karga Zhang Qi Lin Zhang De Zheng |
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Institution: | (1) P. N. Lebedev Physical Institute, Russian Academy of Sciences, Leninsky Pr. 53, 117924 Moscow, Russia;(2) HSRI, Shijiazhuang, Hebei, P.R. China |
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Abstract: | Electron superlattice barriers (ESBs) were used in AlGaAs/GaAs injection lasers to improve the electron confinement of the active layer by Bragg reflection of electron waves. The design of a separate-confinement heterostructure (SCH) laser with ESBs operating at 780–808 nm was optimized. Conventional SCH and SCH-ESB were prepared by low-pressure MOCVD epitaxy. Oxide stripe lasers with stripe widths of 100 and 200µm were prepared. The threshold current density of 0.3 kA/cm2 and the characteristic temperature constantT
0=220 K were measured at a wavelength of 808 nm for SCH-ESB lasers with an active-layer thickness of 40 nm and a resonator length of 0.4–0.5 mm. For conventional SCH lasers with the same geometry, a threshold current density of 0.42 kA/cm2 andT
0=160 K were obtained. Experimental results on the low-temperature photoluminescence characterizing ESB regions are presented and are compared with the calculated miniband energy spectrum of the superlattice structure. The leakage currents for ordinary SCH and SCH-ESB lasers were analyzed. Experimental verification of a reduction in the leakage current for SCH-ESB lasers was obtained. |
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