Space charge limited electric currents in thin-film metal-InSb-metal structures

The VA characteristics of thin-film metal-InSb-metal structures are analyzed in the temperature interval from –100 °C to 140 °C, up to an electric field intensity ofE 2×10⁴ V/cm, on samples having an InSb resistivity of 10⁴ cm, and prepared by cathodic sputtering. In interpreting the VA characteristics, we start out from Lampert's theory on space charged limited electric currents, according to which the injection of carriers of one kind is considered and the mobility of the carriers depends upon the electric field intensity. Attention is drawn to the qualitative agreement of the experimental and theoretical results.