Atomic scale properties of interior interfaces of semiconductor heterostructures as determined by quasi-digital highly selective etching and atomic force microscopy |
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Authors: | R Rettig W Stolz |
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Abstract: | We report on first experiments combining quasi-digital highly selective etching and atomic force microscopy (AFM) to examine the interior interfaces of semiconductor heterostructures. Lattice matched (GaIn)As/InP heterostructures grown by metalorganic vapour-phase epitaxy (MOVPE) are taken as a model system to check the capabilities of this new method. Standard selective etchants for different material systems have been optimized in selectivity and etch rate to achieve a quasi-digital etching behaviour. In this way, the real structure of interior interfaces can be determined by AFM. We find a significant difference between the surface of the heterostructure and the interior interfaces. |
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Keywords: | Semiconductors Interfaces Etching Heterostructures Atomic force microscopy |
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