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Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate |
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| Authors: | Zh. Wang Ch.H. Yang X.Y. Yu T. Yu |
| Affiliation: | aSchool of Environment and Materials Engineering, Yantai University, Yantai 264005, PR China bState Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, PR China cDepartment of Mathematics and Information Science, Yantai University, Yantai 264005, PR China dSchool of Chemistry and Chemical Engineering, Jinan University, Jinan 250100, PR China |
| Abstract: | Bi3.25Na2.25Ti3O12 thin films were prepared on p-Si(1 1 1) substrate by a metalorganic solution decomposition (MOSD) method. The structural characteristic and crystallization of the films were examined by X-ray diffraction. The current–voltage characteristic shows ohmic conductivity in the lower voltage range and space-charge-limited conductivity in the higher voltage range. The dielectric constant is 53 at a frequency of 100 kHz at room temperature and the dissipation factor exists at a minimal value of 0.02 at a frequency of 200 kHz. The retention time estimated by measuring capacitance is about 106 s. Nonhysteretic C–V curves at various frequencies were also collected. |
| Keywords: | A1. X-ray diffraction A3. Polycrystalline deposition B2. Ferroelectric materials |
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