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Back Cover: Localized states emission in type‐I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy (Phys. Status Solidi RRL 3/2017)
Authors:Xiaotian Ge  Dengkui Wang  Xian Gao  Xuan Fang  Shouzhu Niu  Hongyi Gao  Jilong Tang  Xiaohua Wang  Zhipeng Wei  Rui Chen
Affiliation:1. State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, Changchun, P.R. China;2. Department of Electrical and Electronic Engineering, South University of Science and Technology of China, Shenzhen, Guangdong, P.R. China
Abstract:
Keywords:
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