Structural Anisotropy of Amorphous Silicon Films Modified by Femtosecond Laser Pulses |
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| Authors: | D. V. Shuleiko F. V. Kashaev F. V. Potemkin S. V. Zabotnov A. V. Zoteev D. E. Presnov I. N. Parkhomenko I. A. Romanov |
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| Affiliation: | 1.Faculty of Physics,Moscow State University,Moscow,Russia;2.National Research Center Kurchatov Institute,Moscow,Russia;3.Institute of Bio-, Nano-, Information, Cognitive, Socio-Human Sciences and Technologies,Moscow Institute of Physics and Technology,Moscow,Russia;4.Skobeltsyn Institute of Nuclear Physics,Moscow State University,Moscow,Russia;5.Belarus State University,Minsk,Belarus |
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| Abstract: | ![]()
It is demonstrated that the surface-relief orientation in the form of one-dimensional gratings with a period of 1.20 ± 0.02 μm formed under processing of hydrogenated-silicon films by femtosecond laser pulses (1.25 μm) with an energy density of 0.15 J/cm2 is determined by the direction of the polarization vector of the radiation and total laser exposure. Based on the results of the analysis of Raman spectra, the presence of a nanocrystalline phase of silicon with a volume fraction between 15 and 67% (depending on processing conditions) is detected. The observed processes of micro- and nanostructuring are caused by excitation of the surface plasmon–polaritons and nanocrystallization in the near-surface region in the field of high-power femtosecond laser pulses, respectively. In addition, formation of polymorph modifications of silicon Si-III and Si-XII under femtosecond laser processing with a number of pulses exceeding 500 is discovered. Anisotropy of the Raman signal for the above polymorph modifications is revealed. |
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