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Interaction of tunneling electrons with collective modes of the electrodes |
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| Affiliation: | 1. State Key Laboratory of Fire Science, University of Science and Technology of China, Hefei 230026, Anhui, PR China;2. College of Mechanical Engineering and Automation, Huaqiao University, Xiamen, Fujian 361021, PR China;1. Combustion Research Facility, Sandia National Laboratories, Livermore, CA 94551, USA;2. Yale Center for Combustion Studies, Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06520-8286, USA |
| Abstract: | The alteration of the tunneling current due to bulk electron-phonon coupling in one of the electrodes is calculated using the tunneling-Hamiltonian method. Lineshapes are presented for deformation-potential coupling to optical phonons in p-type silicon. The predicted lineshape of d2I/dV2 in a metal-oxide-semiconductor junction shows deviations from the one-electron background which are symmetrical about zero bias in contrast to antisymmetrical structure predicted due to inelastic phonon creation by the tunneling electron. |
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