| 快速光电探测器脉冲响应的电光取样测量 |
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| 引用本文： | 王杰.快速光电探测器脉冲响应的电光取样测量[J].光学学报,1995,15(7):27-930. |
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| 作者姓名： | 王杰 |
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| 作者单位： | 太原工业大学数理力学系 |
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| 摘 要： | 建立了半导体激光器电光取样系统。选择１．３μｍ，ＩｎＧａＡｓ增益开关半导体激光器作为取样光源，利用微带ＧａＡｓ衬底的纵向电光效应作为电光取样器，测量了ＩｎＧａＡｓ／ＩｎＰ雪崩二极管的脉冲响应特性。分析表明，本系统具有０．３５ｍＶ／√Ｈｚ的电压灵敏度和９ｐｓ的时间分辨率。
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| 关 键 词： | 电光取样 超短电脉冲测量 半导体激光器 |
| 收稿时间： | 1994/11/7 |
Electro-Optic Sampling of the Impulse Response of Photodetector |
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| Wang Jie.Electro-Optic Sampling of the Impulse Response of Photodetector[J].Acta Optica Sinica,1995,15(7):27-930. |
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| Authors: | Wang Jie |
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| Abstract: | A direct electro-optic sampling system is set up. A gain-switched InGaAsPinjection laser is used as the source of sampling and a sampler utilizing the longitudinalelectro-optic effect in GaAs substrate of microstrip line was built. The impluse responseof a InGaAs/InP photo-detector of 0. 35 mV/He sensitivity and 9 ps time reolution aredemonstrated. |
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| Keywords: | electro-optic sampling ultra fast electrical pulse measurement samplingtechnology |
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