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| 941nm2%占空比大功率半导体激光器线阵列 | |
| 引用本文： | 辛国锋,花吉珍,陈国鹰,康志龙,杨鹏,徐会武,安振峰.941nm2%占空比大功率半导体激光器线阵列[J].光子学报,2004,33(5):521-524. |
| 作者姓名： | 辛国锋 花吉珍 陈国鹰 康志龙 杨鹏 徐会武 安振峰 |
| 作者单位： | 河北工业大学信息工程学院微电子所,天津,300130;中国电子科技集团公司电子第十三研究所光电专业部,河北,石家庄,050051;中国电子科技集团公司电子第十三研究所光电专业部,河北,石家庄,050051;河北工业大学信息工程学院微电子所,天津,300130 |
| 基金项目： | 河北省科技攻关项目(编号:03213540D)和河北省自然科学基金(编号:603080)项目 |
| 摘 要： | 计算了半导体激光器的激射波长与量子阱宽度以及有源层中In组分的关系,确定了941nm波长的量子阱宽度和In组分.并利用金属有机化合物气相淀积(MOCVD)技术生长了InGaAs/GaAs/AlGaAs分别限制应变单量子阱激光器材料.利用该材料制成半导体激光器线阵列的峰值波长为940.5 nm,光谱的FWHM为2.6 nm,在400 μs,50 Hz的输入电流下,输出峰值功率达到114.7 W(165 A),斜率效率高达0.81 W/A,阈值电流密度为103.7 A/cm2;串联电阻5 mΩ,最高转换效率可达36.9%. |
| 关 键 词： | 金属有机化合物气相淀积 半导体激光器阵列 分别限制结构 单量子阱 |
| 收稿时间： | 2003-09-12 |
| 修稿时间： | 2003年9月12日 |
941 nm 2% Duty Cycle High Output Power Semiconductor Laser Diode Array |
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.941 nm 2% Duty Cycle High Output Power Semiconductor Laser Diode Array[J].Acta Photonica Sinica,2004,33(5):521-524. |
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| Authors: | |
| Institution: | (1 Research Institute of Microelectronics, College of Information, Hebei Univ. of Tech., Tianjin 300130) (2 The 13th Research Institute of CETC, Shijiazhuang 050051) |
| Abstract: | The relations of the semiconductor laser stimulated wavelength to the width of quantum well and the In composition in the quantum well are calculated, then the width of quantum well and the In composition in the quantum well are determined. InGaAs/GaAs/AlGaAs separated confinement heterostructure strained single quantum well materials was grown by the technology of metal organic chemical vapor deposition (MOCVD). The peak wavelength of the semiconductor laser linear array with the materials is 940.5 nm, the full width at half maximum(FWHM) is 2.6 nm, the peak output power is 114.7 W (400 μs,50 Hz, drive current 165 A), the slop efficiency is 0.81 W/A, current density is 103.7 A/cm2;series resistance is 5 mΩ, and the 36.9% wall plug efficiency is reached. |
| Keywords: | Metal organic chemical vapor deposition (MOCVD) Semiconductor laser array Separate confinement heterostructure Single quantum well |
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