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Radiative recombination of indirect exciton in type-II ZnSeTe/ZnSe multiple quantum wells
Authors:Chin-Hau Chia  Wen-Chung Fan  Wu-Ching Chou
Institution:a Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, Taiwan, R.O.C
b Department of Electrophysics, National Chiao Tung University, HsinChu 30010, Taiwan, R.O.C
Abstract:The tunability of the emission energy, oscillator strength and photoluminescence (PL) efficiency by varying the well thickness and excitation density was demonstrated in the ZnSe0.8Te0.2/ZnSe multiple quantum wells. A significant blueshift about 260 meV of the PL peak energy was observed as the well width decreased from 5 to 1 nm. An extraordinary long lifetime (300 ns) of the recombination for the widest sample was detected. The binding energy of the indirect excitons is determined as 12 meV for the thinnest sample. The reduction of PL efficiency by thermal energy is greatly suppressed by employing a high excitation power.
Keywords:ZnSeTe  Type-II quantum well  Time-resolved photoluminescence  Exciton
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