| 沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响 |
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| 引用本文： | 焦洋,张新安,翟俊霞,喻先坤,丁玲红,张伟风.沟道层厚度对室温制备的In2O3薄膜晶体管器件性能的影响[J].发光学报,2013,34(3):324-328. |
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| 作者姓名： | 焦洋 张新安 翟俊霞 喻先坤 丁玲红 张伟风 |
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| 作者单位： | 河南大学 物理与电子学院 河南省光伏材料重点实验室,河南 开封 475004 |
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| 基金项目： | 中国博士后科学基金(20110490995)资助项目 |
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| 摘 要： | 在室温下采用直流磁控溅射以SiO2/Si为衬底制备了不同沟道层厚度的底栅式In2O3薄膜晶体管,讨论了沟道层厚度对底栅In2O3薄膜晶体管的电学性能的影响。实验结果表明:器件的特性与沟道层厚度有关,最优沟道层厚度的In2O3薄膜晶体管为增强型,其阈值电压为2.5 V,开关电流比约为106,场效应迁移率为6.2 cm2·V-1·s-1。
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| 关 键 词： | In2O3薄膜 薄膜晶体管 沟道层厚度 电学特性 |
| 收稿时间： | 2012-11-27 |
Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In2O3 Thin-film Transistors |
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| JIAO Yang,ZHANG Xin-an,ZHAI Jun-xia,YU Xian-kun,DING Ling-hong,ZHANG Wei-feng.Effect of Channel Layer Thickness on The Device Characteristics of Room Temperature Fabricated In2O3 Thin-film Transistors[J].Chinese Journal of Luminescence,2013,34(3):324-328. |
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| Authors: | JIAO Yang ZHANG Xin-an ZHAI Jun-xia YU Xian-kun DING Ling-hong ZHANG Wei-feng |
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| Institution: | School of Physics and Electronics, Institute of Microsystem, Key Laboratory of Photovoltaic Materials, Henan University, Kaifeng 475004, China |
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| Abstract: | In2O3 thin-film transistors (TFTs) with different channel thicknesses were fabricated on SiO2/Si substrates by DC magnetron sputtering at room temperature. The effects of the channel thickness on the electrical properties of In2O3 TFTs with bottom-gate configuration were investigated. The performance of devices was found to be thickness dependent. The In2O3 TFT with the optimized channel thickness exhibites enhancement mode characteristics, the threshold voltage is 2.5 V, the current on-off ratio is 106, and the field-effect mobility is 6.2 cm2·V-1·s-1. |
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| Keywords: | In2O3 films thin film transistor channel thickness electrical performance |
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