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Raman-scattering spectrum of GaN straight nanowires |
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| Authors: | J.Y. Li X.L. Chen Y.G. Cao Z.Y. Qiao Y.C. Lan |
| Affiliation: | (1) Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100080, P.R. China, CN;(2) Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, P.R. China, CN |
| Abstract: | The Raman spectrum of GaN straight nanowires deposited on a LaAlO3 crystal substrate was studied. The E2 (high) phonon frequency at 560 cm-1 shows a 9 cm-1 shift compared with the calculated value. The low-energy shift and band broadening of the Raman modes result from the nanosize effect. The unique property of the low intensity ratio of IE2/IA1(LO) on the Raman spectrum from the GaN straight nanowires was observed. Received: 5 June 2000 / Accepted: 7 June 2000 / Published online: 2 August 2000 |
| Keywords: | PACS: 81.05.Ea 42.65.Dr |
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