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Enhanced dielectric properties of lead barium zirconate thin films by manganese doping |
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| Authors: | Xihong Hao Jiwei Zhai Jing Zhou Xiwen Song |
| Affiliation: | a Functional Materials Research Laboratory, Tongji University, Shanghai 200092, China b School of Materials and Metallurgy, Inner Mongolia University of Science and Technology, Baotou 014010, China c State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China |
| Abstract: | (Pb0.5Ba0.5)ZrO3 (PBZ) and 1 mol% Mn-doped (Pb0.5Ba0.5)ZrO3 (Mn-PBZ) sol were successfully fabricated, and corresponding thin films were deposited on Pt(1 1 1)/TiO2/SiO2/Si(1 0 0) substrates by spin-coating method. Effects of Mn doping on the microstructure and electrical properties of PBZ thin films were investigated systemically. X-ray diffraction patterns showed that both films had a polycrystalline perovskite structure, and that the degree of (1 1 1) orientation were increased by Mn doping. Dielectric measurements illustrated that Mn-doped PBZ thin films not only had a larger dielectric constant, but also possessed a smaller dielectric loss. Accordingly, the tunability and the figure of merit of PBZ films were improved by Mn doping. |
| Keywords: | Lead barium zirconate Doping Microstructure Dielectric properties |
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