Reflection absorption infrared spectroscopy during atomic layer deposition of HfO2 films from tetrakis(ethylmethylamido)hafnium and water

Tetrakis(ethylmethylamido)hafnium and water are commonly used precursors for atomic layer deposition of HfO₂. Using reflection absorption infrared spectroscopy with a buried-metal-layer substrate, we probe surface species present during typical deposition conditions. We observe evidence for thermal decomposition of alkylamido ligands at 320 °C. Additionally, we find that complete saturation of the SiO₂ substrate occurs in the first cycle at ≈100 °C whereas incomplete coverage is apparent even after many cycles at higher temperatures. The use of this technique as an in situ diagnostic useful for process optimization is demonstrated.