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Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer |
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| Authors: | Te-Wei Chiu Kazuhiko Tonooka |
| Institution: | a Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan b Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, 1, Sec. 3, Zhongxiao E. Rd., Taipei, 106, Taiwan |
| Abstract: | VO2 thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO2 thin films on glass substrates. X-ray diffraction studies showed that the VO2 thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO2 deposition were optimized to grow highly b-axis oriented VO2 thin films. The metal-insulator transition properties of the VO2 film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures. |
| Keywords: | VO2 ZnO Buffer layer b-Axis Preferential orientation |
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