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Melting curve of silicon to 15 GPa determined by two-dimensional angle-dispersive diffraction using a Kawai-type apparatus with X-ray transparent sintered diamond anvils |
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| Authors: | Atsushi Kubo Yanbin Wang Takeyuki Uchida Norimasa Nishiyama Thomas S Duffy |
| Institution: | a Department of Geosciences, Princeton University, Princeton, NJ 08544, USA b Center for Advanced Radiation Sources, University of Chicago, Chicago, IL 60637, USA c Department of Physics, New Mexico State University, Las Cruces, NM 88003, USA |
| Abstract: | The melting curve of silicon has been determined up to 15 GPa using a miniaturized Kawai-type apparatus with second-stage cubic anvils made of X-ray transparent sintered diamond. Our results are in good agreement with the melting curve determined by electrical resistivity measurements V.V. Brazhkin, A.G. Lyapin, S.V. Popova, R.N. Voloshin, Nonequilibrium phase transitions and amorphization in Si, Si/GaAs, Ge, and Ge/GaSb at the decompression of high-pressure phases, Phys. Rev. B 51 (1995) 7549] up to the phase I (diamond structure)—phase II (β-tin structure)—liquid triple point. The triple point of phase XI (orthorhombic, Imma)—phase V (simple hexagonal)—liquid has been constrained to be at 14.4(4) GPa and 1010(5) K. These results demonstrate that the combination of X-ray transparent anvils and monochromatic diffraction with area detectors offers a reliable technique to detect melting at high pressures in the multianvil press. |
| Keywords: | C High pressure C X-ray diffraction D Phase transitions D Phase equilibria |
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