Superheat of silicon crystals observed by live X-ray topography |
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Authors: | Jun-ichi Chikawa |
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Institution: | Center for Advanced Science and Technology, 3-1-1 Kouto, Kamigori-cho, Ako-gun, Hyogo 678-1205 |
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Abstract: | In-situ observations of Si crystal growth and melting have been carried out by live X-ray diffraction topography. Superheated solid states beyond the melting point was observed for dislocation-free crystals with melting in their inside. Dislocations were found to impede superheat and to melt the crystal without an appreciable superheating. A slightly superheated state accompanying melting removes all dislocations including immobile ones by their climb motion. It is proposed that self-interstitials needed for the volume change by melting are supplied by climb of dislocations, in contrast to dislocation-free crystals creating the interstitials thermally. In real crystal growth, remelting occurs naturally by melt convection and acts to make the growing crystal dislocation-free. |
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Keywords: | Superheat crystal growth dislocations live X-ray topography |
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